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DIGITAL AUDIO MOSFET
PD - 97249A
IRFI4212H-117P
Features

Integrated half-bridge package Reduces the part count by half Facilitates better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI Can delivery up to 150W per channel into 4 load in half-bridge configuration amplifier Lead-free package
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max
Key Parameters g
100 58 12 6.9 3.4 150 V m: nC nC C
TO-220 Full-Pak 5 PIN
G1, G2 D1, D2 S1, S2
Description
Gate
Drain
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings g
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C EAS TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Power Dissipation f Power Dissipation f Linear Derating Factor Single Pulse Avalanche Energyd Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 300 10lbxin (1.1Nxm) Typ. --- --- Max. 7.1 65 Units C/W
Max.
100 20 11 6.8 44 18 7.0 0.14 41 -55 to + 150
Units
V A
W W/C mJ C
Thermal Resistance g
Parameter
RJC RJA Junction-to-Case f Junction-to-Ambient (free air)
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IRFI4212H-117P
Electrical Characteristics @ TJ = 25C (unless otherwise specified) g
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw RG(int) td(on) tr td(off) tf Ciss Coss Crss Coss eff. LD LS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
Min.
100 --- --- 3.0 --- --- --- --- --- 11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 0.09 58 --- -11 --- --- --- --- --- 12 1.6 0.71 6.2 3.5 6.9 3.4 4.7 8.3 9.5 4.3 490 64 34 110 4.5 7.5 --- --- 72.5 5.0 --- 20 250 200 -200 --- 18 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- nH --- pF VGS = 0V VDS = 50V ns
Conditions
VGS = 0V, ID = 250A
V
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 6.6A e V mV/C A nA S VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 50V, ID = 6.6A VDS = 80V nC VGS = 10V ID = 6.6A See Fig. 6 and 15 VDS = VGS, ID = 250A
VDD = 50V, VGS = 10V ID = 6.6A RG = 2.5
e
= 1.0MHz, Between lead, 6mm (0.25in.) from package
See Fig.5
D
VGS = 0V, VDS = 0V to 80V
G S
and center of die contact
Diode Characteristics g
Parameter
IS @ TC = 25C Continuous Source Current ISM VSD trr Qrr (Body Diode) Pulsed Source Current (Body Diode) c Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
--- --- --- --- ---
Typ. Max. Units
--- --- --- 36 56 11 A 44 1.3 54 84 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 6.6A, VGS = 0V e TJ = 25C, IF = 6.6A di/dt = 100A/s e
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.9mH, RG = 25, IAS = 6.6A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Specifications refer to single MosFET.
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IRFI4212H-117P
100
TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V
100
TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
10 6.0V
10
6.0V
60s PULSE WIDTH
Tj = 25C 1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 1 0.1 1
60s PULSE WIDTH
Tj = 150C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
2.5
R DS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
ID = 6.6A VGS = 10V 2.0
(Normalized)
10 T J = 150C T J = 25C 1
1.5
1.0
VDS = 50V 60s PULSE WIDTH 0.1 3 4 5 6 7 8 9
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10000
Fig 4. Normalized On-Resistance vs. Temperature
12.0 ID= 6.6A
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance (pF)
1000 Ciss Coss 100 Crss
VDS= 80V VDS= 50V VDS= 20V
10 1 10 VDS, Drain-to-Source Voltage (V) 100
0
2
4
6
8
10
12
14
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
QG, Total Gate Charge (nC)
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IRFI4212H-117P
100 1000 100 10 100sec 1 0.1 0.01 Tc = 25C Tj = 150C Single Pulse 1 10 OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 150C
ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A)
10
T J = 25C 1
1msec 10msec DC 100 1000
VGS = 0V 0.1 0.0 0.5 1.0 1.5 VSD, Source-to-Drain Voltage (V) 0.001
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
12 10
ID, Drain Current (A)
VGS(th) , Gate Threshold Voltage (V)
Fig 8. Maximum Safe Operating Area
4.5 4.0 3.5 3.0 2.5 2.0 1.5 ID = 250A
8 6 4 2 0 25 50 75 100 125 150 T J , Junction Temperature (C)
-75 -50 -25
0
25
50
75 100 125 150
Fig 9. Maximum Drain Current vs. Junction Temperature
10 D = 0.50
Thermal Response ( Z thJC )
Fig 10. Threshold Voltage vs. Temperature
T J , Temperature ( C )
1
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 2 3 4 4
0.1
0.02 0.01
Ri (C/W)
0.7942 1.3536 2.2345 2.7177
i (sec)
0.000208 0.001434 0.100647 1.9398
J
1
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 10 100
0.001 1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFI4212H-117P
RDS(on), Drain-to -Source On Resistance (m )
200 ID = 6.6A 175 150 125 100 75 50 4 5 6 7 8 9 10 11 12 13 14 15 16 T J = 25C T J = 125C
EAS , Single Pulse Avalanche Energy (mJ)
175 150 125 100 75 50 25 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) ID TOP 1.2A 2.1A BOTTOM 6.6A
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13a. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 13b. Unclamped Inductive Test Circuit
LD VDS
Fig 13c. Unclamped Inductive Waveforms
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b Gate Charge Waveform
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IRFI4212H-117P
TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117
(Dimensions are shown in millimeters (inches))
TO-220 Full-Pak 5-Pin Part Marking Information
AIR
TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/06
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